Superlattice Integration with Silicon Photonics

Abstract

Theoretical interband physics indicates that GaP/Si, AlP/Si, ZnS/Si, GaAs/Ge, AlAs/Ge, ZnSe/Ge and AlN/3C/SiC short-period superlattices have very large Pockels-and-nonlinear optical coefficients, transparency from MIR to near/mid-visible, Raman gain, and large Franz-Keldysh response. Heterogeneous integration on 300-mm oxidized silicon wafers appears feasible.