System-level electro-thermal analysis of RDS(ON) for power MOSFET

R. Murugan, Nathan Ai, C. Kao
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引用次数: 3

Abstract

A coupled-electro-thermal RDS(ON) (drain to source ON resistance) co-analysis methodology for Power MOSFET is proposed. The methodology contains two functional modules: 1) physical field solvers and 2) equivalent circuit/network solver. The field solver resolves the electrical and thermal field variables by the conventional 3D finite-element method, while the network solver can achieve accurate and efficient results by connecting the equivalent electrical, thermal and flow circuits that are extracted from the system through advanced numerical computational schemes. The integrated equivalent network can then be solved by a generic circuit solver for steady state and transient responses. The methodology is demonstrated, via simulation and measurement, on a 2.5MHz DCDC buck-boost converter. Good correlation between co-analysis methodology and laboratory measurements is achieved.
功率MOSFET的RDS(ON)系统级电热分析
提出了一种功率型MOSFET的耦合-电热RDS(ON)(漏源通阻)联合分析方法。该方法包含两个功能模块:1)物理场求解器和2)等效电路/网络求解器。现场求解器通过传统的三维有限元方法求解电场和热场变量,而网络求解器通过先进的数值计算方案将从系统中提取的等效电、热、流电路连接起来,可以获得准确高效的结果。然后可以用通用电路求解器求解稳态和瞬态响应的集成等效网络。通过仿真和测量,在2.5MHz DCDC降压-升压变换器上验证了该方法。在联合分析方法和实验室测量之间实现了良好的相关性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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