Synthesis of Graphene Layers by Inductive Coupled Plasma Enhanced Chemical Vapor Deposition (ICP-CVD) for Application in Optoelectronics

Abstract

The thin films of Ni and Cu have been deposited on SiO2/Si(100) substrates in a thermal evaporator. The graphene layers have been grown on Ni-Cu films under C2H2-H2-Ar plasma under vacuum annealing condition in ICP-CVD.