Eight Bit Full Adder Design Using Fifteen Transistors With Novel Five Transistors XNOR Gate

P. Sritha, P. Geethamani
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Abstract

Here, a new hybrid 8-bit full adder configuration utilizing both correlative metal-oxide-semiconductor (CMOS) reason and transmission gate judgment is described. The plan was first executed for 1 bit and after that stretched out for 32 bit likewise yet in this paper, the structure was actualized for 8-bit. The circuit was executed utilizing Cadence Virtuoso tools in 45-nm technology at 1.2-V and 1.8-V. Execution parameters for example power, delay, and transistor count up of the full adder contrasted and the officially existing paper. For 1.2-V supply at 45-nm technology, the normal power utilization 31.523nW was observed to be amazingly low with low defer 9.995ns resultant as of the predetermined inclusion of very frail CMOS inverters combined with well-built transmission gates designed for 1-bit. The plan was additionally stretched out for actualizing 8-bit full adder at 1.2-V (1.8-V) along with experimental towards only 241.0nW (556.1nW) power and −1.747ps (9.217ps) delay at 45-nm technology. Proposed full adder has been contrasted and the previously detailed circuits and the power utilization indicate better outcomes by enhancing XNOR gate.
采用15个晶体管的8位全加法器设计,采用新颖的5个晶体管XNOR门
本文介绍了一种利用相关金属氧化物半导体(CMOS)推理和传输门判断的新型混合8位全加法器结构。该计划最初执行为1位,之后扩展为32位,但在本文中,该结构被实现为8位。该电路使用Cadence Virtuoso工具在1.2 v和1.8 v的45纳米技术下执行。执行参数如功率、延时、晶体管计数等与正式存在的加法器进行了对比。对于45纳米技术的1.2 v电源,正常功率利用率31.523nW被观察到惊人的低,低延迟9.995ns,这是由于预定包含非常脆弱的CMOS逆变器和精心设计的1位传输门。此外,该计划还扩展了在1.2 v (1.8 v)下实现8位全加法器,并在45纳米技术下实现241.0nW (556.1nW)功率和- 1.747ps (9.217ps)延迟的实验。对所提出的全加法器进行了对比,结果表明通过增强XNOR门可以获得更好的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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