Secondary Electron Yield Measurements on Materials of Interest to Vacuum Electron Communication Devices

T. Malik, M. Gilmore, S. Portillo, E. Schamiloglu
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引用次数: 3

Abstract

Vacuum electron devices (VEDs) can experience degraded performance, including complete failure, due to multipactor breakdown (MPB). This effect is tied to the production and acceleration of secondary electrons due to electron impact and coupling to the RF fields. In order to better understand the initiation of MPB with materials of interest, researchers at the University of New Mexico (UNM) are carrying out a study of the secondary electron yield (SEY) contribution from various materials used in high power VEDs. This work describes SEY data from electron bombardment in the low energy regime, from 10 eV to 1 keV, on Cu as a baseline material, - stainless steel, aluminum 6061 (Al) and Invar (Fe64/Ni36). SEY data for Cu as a function of incident beam angle is also presented. In addition, different surface cleaning treatment protocols employed in this study will be described.
真空电子通信器件相关材料的二次电子产率测量
由于多因子击穿(MPB),真空电子器件(VEDs)的性能可能会下降,包括完全失效。这种效应与二次电子的产生和加速有关,这是由于电子对射频场的冲击和耦合。为了更好地理解用感兴趣的材料引发MPB,新墨西哥大学(UNM)的研究人员正在对大功率ved中使用的各种材料的二次电子产额(SEY)贡献进行研究。这项工作描述了在低能状态下,从10 eV到1 keV,以Cu为基准材料,-不锈钢,铝6061 (Al)和Invar (Fe64/Ni36)进行电子轰击的SEY数据。同时给出了Cu的SEY数据与入射光束角的关系。此外,本研究中采用的不同表面清洁处理方案将被描述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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