Analytical Design of High-Power MTO Thyristors

Abstract

The design of semiconductor devices is usually performed with finite element methods. In this paper an analytical approach for the design of a high- power MOS turn-off thyristor (MTO) is presented. The model enables the calculation of on-state voltage drop and turn-off losses analytically. The results are compared to a finite-element (FE) model of the MTO. The analytical model offers a high degree of accuracy together with fast calculation times and can therefore be used to find an optimized device design for a given application.