Low Power CMOS VCO Using an 8-shaped Transformer

Ho‐Chang Lee, S. Jang, Ren-Xiang Yang
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Abstract

This letter designs an LC-type CMOS NP-crosscoupled voltage-controlled oscillator (VCO) using an S-shape transformer used to boost the P-FET and N-FET source voltage swings for low power dissipation. The transformer uses two 3-turn coils twisted in series as the primary and the layout method reduces the number of crossing metal lines and parasitic capacitance. The one-turn 8-shaped secondary interleaves with the primary to get high-coupling coefficient. The transformer topology enables symmetric transformer layout and the two lobes of the 8-shaped primary and secondary inductors radiate far-field magnetic fields to suppress the magnetic field radiation. The die area of the VCO in the TSMC 0.1S$\mu$m CMOS process is 0.762 × 0.S55 mm2. The measured phase noise of the VCO at 2. 7S GHz.
采用8形变压器的低功耗CMOS压控振荡器
本文设计了一种lc型CMOS np交叉耦合压控振荡器(VCO),该振荡器使用s形变压器来提升P-FET和N-FET源电压波动,以实现低功耗。该变压器采用2个3匝线圈串联绞合为主线,这种布置方式减少了金属线交叉数和寄生电容。一圈8形次级与初级相互交织,获得高耦合系数。变压器拓扑结构使变压器对称布局,8形初级和次级电感的两个叶向远场磁场辐射,以抑制磁场辐射。在台积电0.1S$\mu$m CMOS工艺中,压控振荡器的模面积为0.762 × 0。S55平方毫米。测量的VCO在2时的相位噪声。7 s GHz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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