Performance Assessment of Polarity Tunable- Ferroelectric-Field Effect Transistor at High Temperature —Part I

Abstract

In the present article, a comprehensive study has been carried out to assess the high temperature performance of Polarity Tunable-Ferroelectric-Field Effect Transistor (PT-FE-FET). Owing to the presence of ferroelectric layer in gate-stack of PT-FE-FET, the device offers super-steep subthreshold characteristics along with steep surface potential characteristics and ON-state current for both n- and p- operational modes. Even at elevated temperatures, the proposed device continues to render superior device performance and is immune towards high temperatures such as 400 K. Thus, the proposed device is a suitable contender for energy-efficient high temperature applications.