Impact of Technology Scaling in DSM Region on Performance of Intercalation-doped MLGNR as VLSI Interconnects

Abstract

Intercalation-doped multilayer graphene nano-ribbons (ID-MLGNR) have been proposed as a potential contender for interconnect applications. In the present research work, the impact of technology scaling i.e. scaling in interconnect dimension is studied on intrinsic parameters of MLGNR based interconnects and consequently on its impedance behavior. The various analysis is carried out at sub-45-nm technology node (viz. 45 nm, 22 nm, 14 nm, 13 nm). It is found that scaling in width (W), thickness (T) and area (A) has an adverse effect on mean free path (MFP), Fermi-energy (Eg), number of conducting channels and layers ( ) the number of conducting (n). However, edge specularity and intercalation-doping in interconnect provide the key process parameters viz. specularity constant (p) and Fermi-energy (EF) to alleviate these adverse effects to a significant level. SPICE simulations reveal that the scaling in width increases the interconnect resistance. Similar trend is observed in inductance. It is noted that at a technology node of 13 nm, the percentage reduction in resistance of metallic armchair(AC)-GNR w.r.t. zigzag (ZZ)-GNR at EF= 0.2eV, 0.4eV & 0.6 eV are 26.2, 13.1 and 8.75 respectively, for local & intermediate level of interconnects. Similarly, respective values of percentage reduction in inductance are 26.28, 13.14, and 8.76. Further, interconnect scaling has a poor influence on the capacitance of AC-and ZZ-MLGNR.