{"title":"The Challenges of Delivering Content and Applications on the Internet","authors":"F. Leighton","doi":"10.1109/RIDE.2004.1281704","DOIUrl":null,"url":null,"abstract":"An interconnection pattern involving crossover of conductive paths is provided by a process which involves forming the first conductive pattern by depositing a continuous layer of a conductive material which is convertible in situ to an insulator and, after masking to define the desired first conductive pattern, converting the rest of the layer to an insulator. Then after providing an insulating layer over the first conductive pattern the second conductive pattern is formed over the first conductive pattern. In one embodiment, the first continuous layer is polycrystalline conducting silicon to which is applied a silicon nitride mask to define the first conductive pattern. After conversion of the unmasked silicon to silicon dioxide the mask serves to insulate the first conductive pattern from the subsequently formed second conductive pattern at the crossovers.","PeriodicalId":290322,"journal":{"name":"International Workshop on Research Issues in Data Engineering","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshop on Research Issues in Data Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RIDE.2004.1281704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
An interconnection pattern involving crossover of conductive paths is provided by a process which involves forming the first conductive pattern by depositing a continuous layer of a conductive material which is convertible in situ to an insulator and, after masking to define the desired first conductive pattern, converting the rest of the layer to an insulator. Then after providing an insulating layer over the first conductive pattern the second conductive pattern is formed over the first conductive pattern. In one embodiment, the first continuous layer is polycrystalline conducting silicon to which is applied a silicon nitride mask to define the first conductive pattern. After conversion of the unmasked silicon to silicon dioxide the mask serves to insulate the first conductive pattern from the subsequently formed second conductive pattern at the crossovers.