Thermoelectric properties of Co(MxSb/sub 1-x/)3 (M=Ge, Sn, Pb) compounds

T. Koyanagi, T. Tsubouchi, M. Ohtani, K. Kishimoto, H. Anno, K. Matsubara
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引用次数: 4

Abstract

The thermoelectric properties of CoSb/sub 3/, which was doped with IV elements of Sn, Ge and Pb, were investigated in order to improve the p-type thermoelectric performance of non-doped CoSb/sub 3/. Co(M/sub x/Sb/sub 1-x/)/sub 3/ (M=Ge, Sn, Pb) compounds were prepared by hot-pressing. The solubility limit of these dopants was determined from measurements of the X-ray photoelectron spectroscopy (XPS). The solubility limit of Ge and Sn are estimated to be about 1.4 and 2.4%, respectively, while Pb hardly substitutes for Sb. The Hall measurements reveal that the maximum carrier concentrations at room temperature were 1.5/spl times/10/sup 19/ cm/sup -3/ for Ge and 2.9/spl times/10/sup 19/ cm/sup -3/ for Sn. The change in the mobility with x can be explained qualitatively by taking account of conduction of both holes and electrons in doped CoSb/sub 3/. The electrical conductivity /spl sigma/ and Seebeck coefficient S of these samples were measured in the temperature range from 300 to 800 K. The p-type conduction is achieved in the whole temperature range by introducing Ge and Sn in CoSb/sub 3/. The values of the power factor S/sup 2//spl sigma/ for Co(Sn/sub x/Sb/sub 1-x/)/sub 3/ with x=1% are of the order of 10/sup -5/W/cmK/sup 2/ and 2/spl sim/10 times as high as those of the non-doped CoSb/sub 3/ in the wide temperature range.
Co(MxSb/sub - 1-x/)3 (M=Ge, Sn, Pb)化合物的热电性质
为了改善未掺杂CoSb/sub 3/的p型热电性能,研究了Sn、Ge和Pb等IV元素掺杂CoSb/sub 3/的热电性能。采用热压法制备Co(M/sub x/Sb/sub 1-x/)/sub 3/ (M=Ge, Sn, Pb)化合物。通过x射线光电子能谱(XPS)测定了这些掺杂剂的溶解度极限。Ge和Sn的溶解度极限分别约为1.4和2.4%,而Pb几乎不能替代Sb。霍尔测量结果表明,室温下的最大载流子浓度为Ge的1.5/spl倍/10/sup 19/ cm/sup -3/, Sn的2.9/spl倍/10/sup 19/ cm/sup -3/。迁移率随x的变化可以通过考虑掺杂CoSb/ sub3 /中空穴和电子的传导来定性地解释。在300 ~ 800 K的温度范围内测量了样品的电导率/spl σ /和塞贝克系数S。通过在CoSb/sub /中引入Ge和Sn,在整个温度范围内实现了p型导通。当x=1%时,Co(Sn/sub x/Sb/sub 1-x/)/sub 3/的功率因数S/sup 2//spl sigma/在宽温度范围内是未掺杂CoSb/sub 3/功率因数S/sup -5/W/cmK/sup 2/和2/spl sim/的10倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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