Rapid thermal annealing of Be implanted GaAs

Abstract

Rapid thermal annealing is used to activate shallow-Be-implanted in GaAs. A proximity annealing technique is used which minimizes As evaporation. Because the substrate is left capless during annealing, surface interaction with the cap and interfacial stress are relieved. Surface morphology and Be redistribution during annealing are analyzed by scanning electron microscopy and secondary ion mass spectroscopy, respectively. Electrical characterization of the activated implant is achieved by means of a rapid thermally alloyed Au-Zn-Au contact using Van der Pauw patterns and the transmission line method. Nearly 100% implant activation and ohmic contacts are achieved.<>