W. Khwa, J. Y. Wu, T. Su, M. Lee, H. Li, Y. Chen, M. BrightSky, T. Wang, T. Hsu, P. Du, W. Chien, S. Kim, H. Cheng, E. Lai, Y. Zhu, M. Chang, H. Lung, C. Lam
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引用次数: 2
Abstract
Inherent cell variation of phase change memory is difficult to control by material or device engineering alone. We previously reported R-I curve shift detection scheme as a good method for monitoring PCM cell characteristics. This paper extends that concept and proposes a Stress-trim procedure to tighten R-I characteristics for PCM MLC operation. By leveraging the right-shift phenomena of PCM R-I curves, we demonstrated that Stress-trim can effectively reduce cell variation to improve MLC performance. A MLC program current amplitude range reduction of 40% and MLC time to failure extension of nearly 150X are achieved.
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