A. Elmaghraby, G. Fischer, R. Weigel, T. Ussmueller
{"title":"An inductor-less LTE receiver using an 8-path filter for TX leakage suppression","authors":"A. Elmaghraby, G. Fischer, R. Weigel, T. Ussmueller","doi":"10.1109/SIRF.2014.6828503","DOIUrl":null,"url":null,"abstract":"In this paper, an inductor-less mobile radio receiver is proposed. An 8-path band pass filter is employed at the input of the receiver to provide TX leakage suppression. The receiver is designed for LTE and UMTS lower bands and tested for worst case duplex distance of 32 MHz. The filter can be programmed to trade the noise degradation for TX suppression. For 0.3 dB noise degradation, IIP2 and IIP3 improvements can reach 17 and 11 dB respectively. The receiver has been fabricated in a 28 nm CMOS technology.","PeriodicalId":226756,"journal":{"name":"2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2014.6828503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, an inductor-less mobile radio receiver is proposed. An 8-path band pass filter is employed at the input of the receiver to provide TX leakage suppression. The receiver is designed for LTE and UMTS lower bands and tested for worst case duplex distance of 32 MHz. The filter can be programmed to trade the noise degradation for TX suppression. For 0.3 dB noise degradation, IIP2 and IIP3 improvements can reach 17 and 11 dB respectively. The receiver has been fabricated in a 28 nm CMOS technology.