On the migration of the melted areas on the surface of the semiconductor

Abstract

The paper discusses electromigration of molten zones on the surface of the semiconductor in the framework of the mechanism of melting of crystallization. Analyzed experimental data electromigration processes on the surface of monocrystalline silicon wafer after passing a current pulse through the aluminum film with energy up to 250 mJ with a duration of 400 μs. Of the evaluation of the speeds of migration of the melted zones of Al-Si in such conditions. For example, the system Ge-Ag is shown that accelerated migration could be associated with the contribution electrocapillary component.