Design flows and collateral for the ASAP7 7nm FinFET predictive process design kit

L. Clark, V. Vashishtha, D. Harris, Samuel Dietrich, Zunyan Wang
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引用次数: 27

Abstract

Educators and researchers exploring integrated circuit design methods need models and design flows for advanced integrated circuit processes. As commercial processes have become highly proprietary, predictive technology models fill the gap. This work describes a design flow for ASAP7, the first 7 nm FinFET PDK, including schematic and layout entry, library characterization, synthesis, placement and routing, parasitic extraction, and HSPICE simulation.
ASAP7 7nm FinFET预测工艺设计套件的设计流程和附件
探索集成电路设计方法的教育工作者和研究人员需要先进集成电路工艺的模型和设计流程。随着商业流程变得高度专有,预测技术模型填补了这一空白。本工作描述了ASAP7的设计流程,ASAP7是第一个7nm FinFET PDK,包括原理图和布局输入,库表征,合成,放置和路由,寄生提取和HSPICE模拟。
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