Gallium Arsenide Photodiode Simulation

Abstract

We present Gallium arsenide (GaAs) Photodiode (PD) simulation using Rsoft LaserMOD. The detector responsivity from 600 to 900 nm and frequency response at 633 nm and 850 nm are calculated and analyzed. Our goal for this study is to develop a PD model from the material level, which can then be used with circuit simulators. To validate our model, we simulate at 850 nm first and compare to known performance at this wavelength. We use the PD data at 850 nm and extract its performance at 633 nm in order to use it in the 633 nm experiment.