Sb co-Doping to Enhance Phosphorous Level on Ge Using Ion Decoupled Plasma Process

Abstract

Ion decoupled plasma technique with low ion energy have been used to demonstrate conformal shallow junctions of phosphorous with higher than l E20 of dopants for germanium (Ge). Adding antimony (Sb) in plasma-assisted doping was found to enhance the phosphorous (P) dopant level dramatically. Various annealing techniques were compared to understand the impact to dopant activation and levels to form shallow junctions with enhanced P level.