Active load pull with fourth harmonic tuning based on an IQ modulator concept

2003 33rd European Microwave Conference, 2003 Pub Date : 2003-10-01 DOI:10.1109/EUMA.2003.340964

B. Bunz, G. Kompa

引用次数: 4

Abstract

This paper presents on wafermeasurements of a transistor optimised for linear amplifier operation with for the first time 4th harmonic load pull variations. Results show that the termination of the 4th harmonic has nonnegligible influence on the performance of an FET.

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基于IQ调制器概念的四次谐波有源负载牵引

本文首次介绍了一种优化后的四次谐波负载拉力变化线性放大器晶体管的晶圆测量。结果表明，四次谐波的终止对FET的性能有不可忽略的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 33rd European Microwave Conference, 2003

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