Epitaxial GaAs MESFETs for high linearity, high efficiency wireless applications

1997 IEEE MTT-S Symposium on Technologies for Wireless Applications Digest Pub Date : 1997-02-23 DOI:10.1109/MTTTWA.1997.595105

E. Schirmann, R. Baeten, J. Costa, D. Green, D. Halchin, M. Martinez, A. Reyes

引用次数: 0

Abstract

Epitaxial GaAs MESFETs with exceptionally low distortion and simultaneously high efficiency have been manufactured for use in linear power amplifier modules. When tuned for linearity, 15 mm devices exhibit Psat>34.5 dBm and PAE>68% at Vds=5.8 V and 835 MHz (single tone). With two tone average Pout=30 dBm, these devices exhibit PAE>48%, IM/sub 3/<-35 dBc, and IM/sub 5/<-45 dBc.

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外延GaAs mesfet用于高线性、高效率的无线应用

具有极低失真和高效率的外延GaAs mesfet已被制造用于线性功率放大器模块。当调整线性度时，15mm器件在Vds=5.8 V和835 MHz(单音)下显示Psat>34.5 dBm和PAE>68%。当两音平均Pout=30 dBm时，这些器件的PAE>为48%，IM/sub 3/<-35 dBc, IM/sub 5/<-45 dBc。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1997 IEEE MTT-S Symposium on Technologies for Wireless Applications Digest

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