1 MHz Loadline System Useful for Quantifying Dispersion in GaAs FET's

Abstract

A simple and low cost system has been developed to help characterize dispersion in GaAs MESFET's. Pulsed I-V systems such as those offered commercially by HP have been used to explore this phenomena. The system described here can deliver similar results, at a lower cost, using commonplace lab equipment. The system employs a 1 MHz signal to excite a DUT, and Ids, Vds and Vgs, relationships are extracted. This low frequency RF I-V is used to create figures of merit that are related to dispersion. This paper will discuss the architecture and system components, data extraction methods, typical device data, data analysis, and application areas.