Selective etching of multilevel submicron structures in plasma-chemical reactor (PCR) with low ion energy

Abstract

Presented here are the results of selective plasma-chemical and chemical etching of multilevel structures with submicron element sizes. Plasma-chemical etching was performed in a PCR, with closed electron drift, and the chemically active ion energy was controlled in the range from 15 up to 300 eV with a variable magnetic field. Argon, insulating gas, chladone-218, and their mixtures with oxygen, were used as working gases. This method was able to remove twenty technological layers with 0.15 /spl mu/m element size.