Electrical and thermal behavior for DC and pulsed stress on chip resistors

Aurelian Botau, D. Bonfert, C. Negrea
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引用次数: 0

Abstract

Due to the continuous trend of miniaturization and high density interconnect PCBs, chip resistors are getting smaller and smaller. The resistive layer dimensions have been reduced and its small thickness is dependant by the technological manufacturing process, therefore transient electrical events like Electrostatic Discharge Pulses (ESD) can change the initial properties of the resistive layer, which leads to a modification of the resistance value or damaging the layer, causing chip resistor failure. This paper presents an analysis for the thermal and electrical behavior of thick and thin film chip resistors, by applying DC- current and rectangular pulses of short width and high voltage and current amplitudes. These high power and short duration pulses give in situ information about the adiabatic behavior of the analyzed layer.
片式电阻的直流和脉冲应力的电学和热行为
由于微型化和高密度互连pcb的不断发展趋势,片式电阻越来越小。由于工艺制造过程导致电阻层尺寸减小,其厚度小,因此静电放电脉冲(ESD)等瞬态电事件会改变电阻层的初始特性,从而导致电阻值的改变或层的损坏,导致片式电阻失效。本文采用短宽、高电压和高电流幅值的直流电脉冲和矩形脉冲,分析了厚膜和薄膜片式电阻器的热学和电学特性。这些高功率和短持续时间的脉冲给出了被分析层绝热行为的原位信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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