Evaluation of test methods and associated test structures for interconnect reliability control

Abstract

A number of fast wafer level test methods exist for interconnect reliability evaluation. The relative abilities of three such methods to predict the quality and reliability of the interconnect over very short test times are evaluated in this work. Four different test structure designs are also evaluated and the results are compared with package level median time to failure (MTF) results. The isothermal test method combined with SWEAT-type (standard wafer-level electromigration accelerated test) structures is shown to be the most suitable combination for interconnect reliability detection and control over very short test times.