Validation of Nonlinear Bipolar Transistor Model by Small-Signal Measurements

Abstract

A new method for the validity analysis of nonlinear transistor models is presented based on DC-and small-signal S-parameter measurements and realistic consideration of the measurement and de-embedding errors and singularities of the small-signal equivalent circuit. As an example, some analysis results for an extended Gummel Poon model are presented in the case of a UHF bipolar power transistor.