Performance of Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Sol-Gel Derived MgxZn1-xO Semiconductor Thin Films

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI:10.23919/AM-FPD.2018.8437436

Chien-Yie Tsay, Shih-Ting Chen, Man-Ting Fan

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Abstract

In this study, MgxZn1-xO (0≤ x ≤ 0.3) semiconductor thin films and metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors were deposited on alkali-free glass substrates (NEG OA-10) using a sol-gel spin-coating process. The effect of incorporating Mg into ZnO thin films on the structural, electrical, optical, and UV photoresponse properties were investigated and photoconductive UV detectors were realized using ZnO and MgZnO thin films. Experimental results showed that the as-prepared MgZnO thin films had a polycrystalline hexagonal wurtzite phase and exhibited high transparency (≥90.0%) in the visible region. The optical bandgap of MgZnO thin films increased from 3.25 to 3.56 eV and the electrical resistivity of the thin films rose from 6.10×10² to 8.86×10⁴ Ω-cm with increasing Mg content. In addition, We found that the MgZnO photodetectors exhibited better photocurrent generation than the pure ZnO photodetectors and the Mg0.1Zn0.9O device exhibited the highest Ion to Ioff ratio of 2×10³.

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基于溶胶-凝胶衍生 MgxZn1-xO 半导体薄膜的金属-半导体-金属紫外线光电探测器的性能

在本研究中，采用溶胶-凝胶自旋镀膜工艺在无碱玻璃衬底(NEG OA-10)上沉积MgxZn1-xO(0≤x≤0.3)半导体薄膜和金属-半导体-金属(MSM)紫外(UV)光电探测器。研究了镁对ZnO薄膜结构、电学、光学和紫外光响应性能的影响，并利用ZnO和MgZnO薄膜实现了光导紫外探测器。实验结果表明，制备的MgZnO薄膜具有多晶六方纤锌矿相，在可见光区具有较高的透明度(≥90.0%)。随着Mg含量的增加，MgZnO薄膜的光学带隙从3.25 eV增加到3.56 eV，薄膜的电阻率从6.10×102增加到8.86×104 Ω-cm。此外，我们发现MgZnO光电探测器比纯ZnO光电探测器具有更好的光电流产生能力，并且Mg0.1Zn0.9O器件具有最高的离子off比2×103。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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