A Single-Chip 5GHz WLAN Transmitter in 0.35μm Si/SiGe BiCMOS Technology

F. Alimenti, M. Borgarino, R. Codeluppi, V. Palazzari, M. Pifferi, L. Roselli, A. Scorzoni, F. Fantini
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引用次数: 1

Abstract

This paper deals with the design of a 5GHz WLAN heterodyne transmitter for domotic applications. The transmitter has been realized in commercial 0.35μm Si/SiGe BiCMOS technology with the purpose to reduce cost while achieve an high integration level. Measurements on a prototype, wire-bonded on a low-cost FR4 printed circuit board, have been carried-out showing an overall linear gain of 14dB an input referred compression point of -6.5dBm and a third-order input intercept point of +2.7dBm
一种采用0.35μm Si/SiGe BiCMOS技术的5GHz单片WLAN发射机
本文研究了一种国内应用的5GHz无线局域网外差发射机的设计。该发射机采用商用0.35μm Si/SiGe BiCMOS技术实现,目的是在降低成本的同时实现高集成度。在低成本FR4印刷电路板上进行的原型线键合测量显示,总体线性增益为14dB,输入参考压缩点为-6.5dBm,三阶输入截距点为+2.7dBm
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