Metal Insulator Metal Capacitors, Spiral Inductors and Resistors for Multilayer CPW MMIC

E. Sinulingga, Abdul Risyal Nasution
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Abstract

Lumped elements such as inductors and capacitors often occupy the most area on the MMIC chip. The multilayer technique was presented as an alternative to reduce the area of those elements. Furthermore, variation of lumped elements is still limited for multilayer CPW MMIC applications. Therefore, in this research, several variations of multilayer capacitors, inductors, and resistors for MMIC application were presented. The folded design of the capacitor and overlap design of the inductor was utilized to obtain higher capacitance and inductance, respectively. The NiCr resistor with various sizes was also designed to obtain various resistance values. The characteristic of the capacitor, inductor, and resistor was analyzed using scattering parameters and validated using measured data. The MIM capacitor with capacitances of 0.4 to 2.4 pF has been realized, spiral inductors with inductances of 0.6 to 7.6 nH, and NiCr thin film resistors with resistances of 20 $\Omega$ to 150 $\Omega$ were also presented in this paper.
用于多层CPW MMIC的金属绝缘体、金属电容器、螺旋电感和电阻
诸如电感和电容器之类的集总元件通常占据MMIC芯片上的大部分面积。多层技术被提出作为一种替代方案,以减少这些元素的面积。此外,对于多层CPW MMIC应用,集总元件的变化仍然有限。因此,在本研究中,提出了几种用于MMIC应用的多层电容器、电感器和电阻。利用电容器的折叠设计和电感的重叠设计分别获得更高的电容和电感。设计了不同尺寸的NiCr电阻器,以获得不同的电阻值。利用散射参数分析了电容、电感和电阻器的特性,并用实测数据进行了验证。实现了电容为0.4 ~ 2.4 pF的MIM电容器,电感为0.6 ~ 7.6 nH的螺旋电感,以及电阻为20 ~ 150的NiCr薄膜电阻器。
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