Characterisation of transparent ITO emitter contact InP/InGaAs heterojunction phototransistors

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493698

S. Bashar, A. Rezazadeh

引用次数: 4

Abstract

The electrical, optical and spectral responses of optically transparent emitter InP/InGaAs heterojunction phototransistors (HPTs) fabricated using Indium Tin Oxide (ITO) are presented. These HPTs showed significantly increased optical responsivities while: the electrical characteristics were similar to their respective opaque counterparts. Responsivities of 28 A/W at 1310 nm for the InP/InGaAs HPTs were obtained. The spectral responses of these phototransistors were simulated and compared with the measured results and good correlation between the experiments and the theoretical models were obtained.

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透明ITO发射极接触InP/InGaAs异质结光电晶体管的特性

介绍了用氧化铟锡(ITO)制备的光透明发射体InP/InGaAs异质结光电晶体管(HPTs)的电学、光学和光谱响应。这些hpt显示出明显增加的光学响应，而电特性与各自的不透明对应物相似。得到了InP/InGaAs hpt在1310 nm处的28 A/W的响应度。对这些光电晶体管的光谱响应进行了仿真，并与实测结果进行了比较，实验结果与理论模型具有较好的相关性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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