{"title":"GaN Based S-Band 500W Solid State Power Amplifier (SSPA) Module for Troposcatter Communications","authors":"S. Singh, L. Suthar, Rajendra Singh, Ashok Kumar","doi":"10.1109/IMaRC45935.2019.9118681","DOIUrl":null,"url":null,"abstract":"S-Band Troposcatter communication requires a linear high power 2 kW SSPA. The desired SSPA needs to be realized by phase combining 500 W Power Amplifier Modules (PAMs). The paper provides the design and development of a GaN based wideband Solid State Power Amplifier (SSPA) PAM module with RF output 500 watts or +57dBm. The system utilizes modular design approach using 300W SSPA Pallet as the basic building block. The amplifier device Cree GaN HEMT CGH21240F, in class-AB bias, was selected for realization of basic amplifier. The I/p and O/p matching circuits were designed and simulated in ADS software. 30 mil Rogers RO4350 substrate was used for fabrication of PCBs. The output RF power up to +57 dBm and good linearity with Power Added Efficiency (PAE) around 40 percent was achieved.","PeriodicalId":338001,"journal":{"name":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"198 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMaRC45935.2019.9118681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
S-Band Troposcatter communication requires a linear high power 2 kW SSPA. The desired SSPA needs to be realized by phase combining 500 W Power Amplifier Modules (PAMs). The paper provides the design and development of a GaN based wideband Solid State Power Amplifier (SSPA) PAM module with RF output 500 watts or +57dBm. The system utilizes modular design approach using 300W SSPA Pallet as the basic building block. The amplifier device Cree GaN HEMT CGH21240F, in class-AB bias, was selected for realization of basic amplifier. The I/p and O/p matching circuits were designed and simulated in ADS software. 30 mil Rogers RO4350 substrate was used for fabrication of PCBs. The output RF power up to +57 dBm and good linearity with Power Added Efficiency (PAE) around 40 percent was achieved.