GaN Based S-Band 500W Solid State Power Amplifier (SSPA) Module for Troposcatter Communications

S. Singh, L. Suthar, Rajendra Singh, Ashok Kumar
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引用次数: 3

Abstract

S-Band Troposcatter communication requires a linear high power 2 kW SSPA. The desired SSPA needs to be realized by phase combining 500 W Power Amplifier Modules (PAMs). The paper provides the design and development of a GaN based wideband Solid State Power Amplifier (SSPA) PAM module with RF output 500 watts or +57dBm. The system utilizes modular design approach using 300W SSPA Pallet as the basic building block. The amplifier device Cree GaN HEMT CGH21240F, in class-AB bias, was selected for realization of basic amplifier. The I/p and O/p matching circuits were designed and simulated in ADS software. 30 mil Rogers RO4350 substrate was used for fabrication of PCBs. The output RF power up to +57 dBm and good linearity with Power Added Efficiency (PAE) around 40 percent was achieved.
基于GaN的s波段500W固态功率放大器(SSPA)对流层散射通信模块
s波段对流层散射通信需要线性高功率2kw SSPA。所需的SSPA需要通过相组合500w功率放大器模块(pam)来实现。本文提出了一种基于GaN的宽带固态功率放大器(SSPA) PAM模块的设计与开发,该模块的射频输出功率为500瓦或+57dBm。系统采用模块化设计方法,以300W SSPA托盘为基本构件。基本放大器的实现选用ab类偏置的Cree GaN HEMT CGH21240F放大器器件。设计了I/p和O/p匹配电路,并在ADS软件中进行了仿真。采用30mil Rogers RO4350基板制备pcb。输出射频功率高达+57 dBm,线性度良好,功率附加效率(PAE)约为40%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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