Field controlled thyristors-a new family of power semiconductors with advanced circuitry

PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference Pub Date : 1988-04-11 DOI:10.1109/PESC.1988.18276

H. Gruening, J. Voboril

引用次数: 7

Abstract

Field-controlled thyristors (FCTs) exhibiting true normally-off characteristics without deterioration of the on-state are reported. Snubberless switching capability has been extended to 1200 V and 16 A (200 A/cm/sup 2/, dynamic avalanche). A novel latching mechanism, called current punchthrough, that limits the turn-off current is presented. Typical devise characteristics are reported for both a normally-on FCT with lifetime control (dV/dt=10 kV/ mu s) and a normally-off FCT without lifetime control (dV/dt=600 V/ mu s). The influence of the drive circuit (MOSFET-FCT and thyristor-FCT cascades) is discussed.<>

查看原文本刊更多论文

场控晶闸管——具有先进电路的新型功率半导体

据报道，场控晶闸管(fct)表现出真正的正常关断特性，而不破坏导通状态。无缓冲开关能力已扩展到1200 V和16 A (200 A/cm/sup 2/，动态雪崩)。提出了一种限制关断电流的新型锁存机构，称为电流穿孔器。本文报道了具有寿命控制的常开FCT (dV/dt=10 kV/ μ s)和不具有寿命控制的常关FCT (dV/dt=600 V/ μ s)的典型设计特性，并讨论了驱动电路(MOSFET-FCT和晶闸管-FCT级联)的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference

自引率

0.00%

发文量