A statistical CNT channel model for gate to channel capacitance of Carbon Nano Tube Field Effect Transistor

Abstract

In this paper, a new model is proposed for gate to channel capacitance leveraging a more realistic assumption for placement of CNTs within the channel region. Under the proposed model, the distribution of the carbon nanotubes along the channel region is assumed to take on a Gaussian probability distribution as opposed to earlier assumption conjectured in the literature as being a uniform distribution. Results show that this model offers higher percentages of improvements regarding device power consumption with lower values of gate to channel capacitance, which is a direct measure of the device energy requirements.