Research of the creation opportunity of matrix X-ray gallium arsenide detector

Abstract

Preliminary accounts and experiments for clarification of the creation opportunity of matrix X-ray gallium arsenide detector with embed electronics were made. It is revealed, that efficiency of charge collection in this detector will be higher than the selenium prototype. Also it is revealed, that detector channel resistance can exceed 1000 GOhm, and storage capacitor and transistor closed channel resistance can be made higher than 100 GOhm that is essential and sufficient for proper circuit work.