A performance comparison of advanced SOI technologies

Proceedings. SOS/SOI Technology Workshop Pub Date : 1988-10-03 DOI:10.1109/SOI.1988.95448

D. Adams, M. Austin, R. Rai-Choudhury, J. Hwang

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引用次数: 1

Abstract

Summary form only given. Devices have been fabricated using conventional SOS, rapid thermal anneal (RTA) SOS, solid-phase epitaxy and regrowth (SPEAR) SOS, RTA-SPEAR SOS, separation by implantation of oxygen (SIMOX), RTA-SIMOX, and zone-melt recrystallization (ZMR) wafers. The process sequence used was a double-level-metal 1.25- mu m CMOS/SOS process. A comprehensive test vehicle featuring 16 K and 64 K SRAMs was used to allow both parametric and functional characterization. For 0.3- mu m silicon film thickness on SOS, SPEAR processing resulted in a 30% improvement in carrier mobilities and a 10-20% improvement in device saturation currents over conventional SOS. No significant leakage improvement was observed. RTA processing at 1390 degrees C has shown potential for performance enhancement on SOS. Mobility improvements of 10-20% have been demonstrated, while drain leakage was unchanged. Preliminary SIMOX results have indicated improvements of 50% for electron mobilities, with hole mobilities unchanged over conventional SOS. Drain leakage was two orders of magnitude lower. Characterization results have also been obtained for ZMR, RTA-SPEAR SOS, improved SPEAR-SOS, and improved SIMOX wafers.<>

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先进SOI技术的性能比较

只提供摘要形式。器件的制造方法包括传统的SOS、快速热退火(RTA) SOS、固相外延和再生(SPEAR) SOS、RTA-SPEAR SOS、氧注入分离(SIMOX)、RTA-SIMOX和区域熔体再结晶(ZMR)晶圆。采用的工艺顺序为双级金属1.25 μ m CMOS/SOS工艺。采用了一种具有16k和64k sram的综合测试车辆，以允许参数化和功能表征。对于0.3 μ m硅膜厚度的SOS, SPEAR处理使载流子迁移率提高了30%，器件饱和电流比传统SOS提高了10-20%。未观察到明显的泄漏改善。在1390℃下的RTA处理显示出SOS性能增强的潜力。流动性提高了10-20%，而排水泄漏没有变化。初步的SIMOX结果表明，与传统SOS相比，电子迁移率提高了50%，空穴迁移率保持不变。排水管泄漏要低两个数量级。ZMR, RTA-SPEAR -SOS，改进的SPEAR-SOS和改进的SIMOX晶圆的表征结果也得到了。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings. SOS/SOI Technology Workshop

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