Electrical characterization of AIN/Si(111) interface

2007 Conference on Lasers and Electro-Optics - Pacific Rim Pub Date : 2007-12-04 DOI:10.1109/CLEOPR.2007.4391715

C. Tseng, W. Lien, Y.N. Wang, N. Chen

引用次数: 0

Abstract

This work investigates the interface of AlN/Si(111l) by Hall and thermal electrical measurement. The results show that a p-type conducting layer was unintentionally formed at the interface.

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AIN/Si(111)界面的电学特性

本文通过霍尔测量和热电测量研究了AlN/Si(111l)的界面。结果表明，在界面处无意间形成了p型导电层。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 Conference on Lasers and Electro-Optics - Pacific Rim

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