Measuring the elastic modulus and ultimate strength of low-k dielectric materials by means of the bulge test

Y. Xiang, T. Tsui, J. Vlassak, A. Mckerrow
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引用次数: 14

Abstract

The mechanical properties of organosilicate glass (OSG) thin films were measured for the first time using bulge testing of OSG / silicon nitride (SiN/sub x/) freestanding membranes. Evaluation of two different OSG films revealed significant differences in Young's modulus and residual stress between the two dielectric films. Young's modulus of both types of OSGs was independently measured using nanoindentation and found to be at least 8.5-17% greater than that measured using the bulge test. It is well known, and demonstrated herein, that modulus data obtained from nanoindentation is influenced by mechanical properties of the substrate. Operating without this constraint, it is believed that data obtained using the bulge test more accurately represents the intrinsic mechanical properties of OSG thin films.
用膨胀试验方法测定低k介电材料的弹性模量和极限强度
利用OSG /氮化硅(SiN/sub x/)独立膜的胀形测试方法,首次测定了有机硅酸盐玻璃(OSG)薄膜的力学性能。对两种不同的OSG薄膜的评价表明,两种介质薄膜在杨氏模量和残余应力方面存在显著差异。使用纳米压痕分别测量了两种osg的杨氏模量,发现其比使用膨胀试验测量的杨氏模量至少高8.5-17%。众所周知,从纳米压痕中获得的模量数据受到衬底力学性能的影响。在没有这种约束的情况下,我们认为用膨胀试验获得的数据更准确地代表了OSG薄膜的内在力学性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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