Bulk and interfacial dielectric response of dysprosium and ytterbium oxide thin capacitors

Abstract

Capacitance, dielectric permittivity and losses are presented as a function of temperature, frequency, DC voltage, insulator thickness, and electrode material for Dy/sub 2/O/sub 3/ and Yb/sub 2/O/sub 3/ thin films deposited in MIM (metal-insulator-metal) sandwiches. Results show that both volumes of the dielectric films as well as the M/I interfaces (Schottky barriers) are responsible for the dielectric response of these capacitors.<>