K. Miller, T. Ziemba, J. Prager, I. Slobodov, J. Picard
{"title":"Isolated, high voltage arbirtary pulse generator","authors":"K. Miller, T. Ziemba, J. Prager, I. Slobodov, J. Picard","doi":"10.1109/PLASMA.2016.7534028","DOIUrl":null,"url":null,"abstract":"Eagle Harbor Technologies, Inc. has developed an Arbitrary Pulse Generator (APG) with isolated high voltage output. The EHT APG can produce output pulses with voltages up to 10 kV and fast rise time (100 ns) at high pulse repetition frequency (up to 100 kHz) with a user-adjustable duty cycle from 0-100%. The isolated output allows the pulse generator to be connected to loads that need to be biased. These pulser generators utilize modern silicon carbide (SiC) MOSFETs, which offer lower switching and conduction losses while allowing for higher switching frequency capabilities compared to IGBTs. This pulse generator has applications for RF plasma heating; inductive and arc plasma sources; magnetron driving; and generation of arbitrary pulses at high voltage, high current, and high pulse repetition frequency in the semiconductor processing, non-equilibrium plasma source, and material processing communities.","PeriodicalId":424336,"journal":{"name":"2016 IEEE International Conference on Plasma Science (ICOPS)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Plasma Science (ICOPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PLASMA.2016.7534028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Eagle Harbor Technologies, Inc. has developed an Arbitrary Pulse Generator (APG) with isolated high voltage output. The EHT APG can produce output pulses with voltages up to 10 kV and fast rise time (100 ns) at high pulse repetition frequency (up to 100 kHz) with a user-adjustable duty cycle from 0-100%. The isolated output allows the pulse generator to be connected to loads that need to be biased. These pulser generators utilize modern silicon carbide (SiC) MOSFETs, which offer lower switching and conduction losses while allowing for higher switching frequency capabilities compared to IGBTs. This pulse generator has applications for RF plasma heating; inductive and arc plasma sources; magnetron driving; and generation of arbitrary pulses at high voltage, high current, and high pulse repetition frequency in the semiconductor processing, non-equilibrium plasma source, and material processing communities.