Teaching microelectronics at Olin College

B. Minch
{"title":"Teaching microelectronics at Olin College","authors":"B. Minch","doi":"10.1109/MSE.2017.7945074","DOIUrl":null,"url":null,"abstract":"In this paper, I describe the curricular context and some of the distinctive features of the required sophomore/junior-level required course in microelectronic circuits that I have developed and taught at Olin College over the past eleven years. These features include the use of low-cost portable USB instrumentation for the labs, the coverage of CMOS at all levels of inversion right from the start using a simple, three-parameter Enz-Krummenacher-Vittoz (EKV) model of the long-channel MOS transistor, an emphasis on design-oriented driving-point impedance circuit analysis techniques, and the development of students' circuit reasoning abilities.","PeriodicalId":339888,"journal":{"name":"2017 IEEE International Conference on Microelectronic Systems Education (MSE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Conference on Microelectronic Systems Education (MSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MSE.2017.7945074","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In this paper, I describe the curricular context and some of the distinctive features of the required sophomore/junior-level required course in microelectronic circuits that I have developed and taught at Olin College over the past eleven years. These features include the use of low-cost portable USB instrumentation for the labs, the coverage of CMOS at all levels of inversion right from the start using a simple, three-parameter Enz-Krummenacher-Vittoz (EKV) model of the long-channel MOS transistor, an emphasis on design-oriented driving-point impedance circuit analysis techniques, and the development of students' circuit reasoning abilities.
在奥林学院教授微电子学
在这篇论文中,我描述了我在过去11年里在奥林学院开发和教授的微电子电路课程的课程背景和一些独特的特点。这些特点包括实验室使用低成本的便携式USB仪器,从一开始就使用简单的三参数Enz-Krummenacher-Vittoz (EKV)长通道MOS晶体管模型覆盖CMOS的所有反转级别,强调面向设计的驱动点阻抗电路分析技术,以及培养学生的电路推理能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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