Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections

IEEE CPMT Symposium Japan 2014 Pub Date : 2014-11-01 DOI:10.1109/ICSJ.2014.7009612

K. Murayama, Mitsuhiro Aizawa, T. Kurihara

引用次数: 0

Abstract

Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections were investigated. In the case of fine pitch SnBi eutectic solder bump (dia. 25 micro meter), maximum increasing-rate of resistance was significant less than that of larger seized bump structure (Dia. 75 micro meter).

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小间距SnBi共晶凸点互连中的电迁移行为

研究了小间距SnBi共晶凸点互连中的电迁移行为。在小间距SnBi共晶焊料凹凸(直径)的情况下。直径为25 μ m时，最大阻力增幅显著小于直径为75 μ m时的最大阻力增幅。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE CPMT Symposium Japan 2014

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