MEMS-Based Power Gating for Highly Scalable Periodic and Event-Driven Processing

Michael B. Henry, Robert Lyerly, L. Nazhandali, A. Fruehling, D. Peroulis
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引用次数: 5

Abstract

For periodic and event-driven applications with long standby times, controlling leakage is essential. This paper investigates using MEMS switches for power gating processors, which eliminates standby leakage power and allows for highly scalable processing. We show that when power gating with a MEMS switch, low technology nodes and low threshold voltages, which offer low switching energy and high speeds, are optimal. We also compare a MEMS-gated processor to two recent low leakage processors and show that it is ideal for applications with 100+ ms standby times. With CMOS compatibility on the horizon, MEMS switches are an attractive option for low-leakage applications.
基于mems的高可扩展周期和事件驱动处理的功率门控
对于具有长待机时间的周期性和事件驱动的应用程序,控制泄漏是必不可少的。本文研究了将MEMS开关用于功率门控处理器,它消除了待机泄漏功率并允许高度可扩展的处理。我们表明,当使用MEMS开关进行功率门控时,低技术节点和低阈值电压,提供低开关能量和高速度,是最佳的。我们还将mems门控处理器与两种最新的低泄漏处理器进行了比较,并表明它非常适合待机时间为100+ ms的应用。随着CMOS兼容性的发展,MEMS开关是低泄漏应用的一个有吸引力的选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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