Progress in the ITO/InP solar cell

Abstract

The development history of the hybrid and bulk devices and, in particular, the use of H/sub 2/ in the sputtering gas is summarized. The fabrication of the cell is described. Efforts to understand the dependence of the ITO/InP cell V/sub oc/ on the fabrication parameters, which have relied extensively on the PCIV doping profiling technique, are discussed. The results indicate that the V/sub oc/ increase observed for both hybrid and bulk cells as the hydrogen partial pressure is increased is due to the observed reduction and grading of the base doping, likely caused by H/sub 2/ passivation of Zn acceptors.<>