Black-Box Modelling of Nonlinear Devices for Frequency-Domain Analysis

Abstract

A large-signal black-box model for nonlinear microwave devices is presented. The model is directly constructed from measured small-signal s-parameters and DC characteristic curves of the device without complicated parameter extraction procedures. Separate determination of device parasitics is not necessary. The model is self-consistent, very general and device-and technology-independent. Black-box model of a MESFET and its implementation in a frequency-domain analysis program is described, and measured and calculated results are compared.