Design Concepts of Low-Noise Amplifier for Radio Frequency Receivers

Sumathi Manickam
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引用次数: 3

Abstract

The development of high-performance radio frequency (RF) transceivers or multi- standard/reconfigurable receivers requires an innovative RF front-end design to ensure the best from a good technology. In general, the performance of front-end and/or building blocks can be improved only by an increase in the supply voltage, width of the transistors or an additional stage at the output of a circuit. This leads to increase the design issues like circuit size and the power consumption. Presently, the wireless market and the need to develop efficient portable electronic systems have pushed the industry to the production of circuit designs with low-voltage power supply. The objective of this work is to introduce an innovative single-stage design structure of low noise amplifier (LNA) to achieve higher performance under low operating voltage. TSMC 0.18 micron CMOS technology scale is utilized for realizing LNA designs and the simulation process is carried out with a supply voltage of 1.8 V. The LNA performance measures are analyzed by using an Intel Core2 duo CPU E7400@2.80GHz processor with Agilent ’ s Advanced Design System (ADS) 2009 version software.
射频接收机低噪声放大器的设计概念
高性能射频(RF)收发器或多标准/可重构接收器的发展需要创新的射频前端设计,以确保良好技术的最佳效果。一般来说,前端和/或构建模块的性能只能通过增加电源电压、晶体管宽度或电路输出端的附加级来改善。这导致增加设计问题,如电路尺寸和功耗。目前,无线市场的发展和开发高效便携式电子系统的需求推动了该行业采用低压电源设计电路的生产。本研究的目的是介绍一种创新的低噪声放大器(LNA)单级设计结构,以在低工作电压下实现更高的性能。采用TSMC 0.18微米CMOS工艺尺度实现LNA设计,并在1.8 V电源电压下进行仿真。采用Intel Core2双核CPU E7400@2.80GHz处理器和安捷伦高级设计系统(ADS) 2009版软件对LNA性能进行了分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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