{"title":"Dual-polarization Ultrawideband Absorber With two Independently Adjustable Notch","authors":"Yunfei Feng, J. Zang","doi":"10.1109/ICEICT55736.2022.9908610","DOIUrl":null,"url":null,"abstract":"In this article, an absorptive frequency-selective reflector (AFSR) with three-absorptive bands at the sides of two independent adjustable notch bands is presented. The AFSR is designed by cascading the upper layer realized with dipole-like elements and the lower layer realized with a pattern consisting of a split arc and a circle, both layers are loaded with lumped resistors and varactors. The two notch bands are respectively adjusted by the varactor diodes loaded on different layers. The lower notch band is tuned from 5.3 to 9.3 GHz when the capacitance of the lower layer decreased from 2.1 to 0.23 pF. Meanwhile, the higher notch band is tuned from 13.0 to 15.9 GHz when the capacitances of the upper layer decrease from 2.1 to 0.23 pF. The proposed structure has great application potential in radar stealth and electromagnetic compatibility.","PeriodicalId":179327,"journal":{"name":"2022 IEEE 5th International Conference on Electronic Information and Communication Technology (ICEICT)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 5th International Conference on Electronic Information and Communication Technology (ICEICT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEICT55736.2022.9908610","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this article, an absorptive frequency-selective reflector (AFSR) with three-absorptive bands at the sides of two independent adjustable notch bands is presented. The AFSR is designed by cascading the upper layer realized with dipole-like elements and the lower layer realized with a pattern consisting of a split arc and a circle, both layers are loaded with lumped resistors and varactors. The two notch bands are respectively adjusted by the varactor diodes loaded on different layers. The lower notch band is tuned from 5.3 to 9.3 GHz when the capacitance of the lower layer decreased from 2.1 to 0.23 pF. Meanwhile, the higher notch band is tuned from 13.0 to 15.9 GHz when the capacitances of the upper layer decrease from 2.1 to 0.23 pF. The proposed structure has great application potential in radar stealth and electromagnetic compatibility.