High-endurance and performance-efficient design of hybrid cache architectures through adaptive line replacement

A. Jadidi, M. Arjomand, H. Sarbazi-Azad
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引用次数: 94

Abstract

In this paper, we propose a run-time strategy for managing writes onto last level cache in chip multiprocessors where STT-RAM memory is used as baseline technology. To this end, we assume that each cache set is decomposed into limited SRAM lines and large number of STT-RAM lines. SRAM lines are target of frequently-written data and rarely-written or read-only ones are pushed into STT-RAM. As a novel contribution, a low-overhead, fully-hardware technique is utilized to detect write-intensive data blocks of working set and place them into SRAM lines while the remaining data blocks are candidates to be remapped onto STT-RAM blocks during system operation. Therefore, the achieved cache architecture has large capacity and consumes near zero leakage energy using STT-RAM array; while dynamic write energy, acceptable write latency, and long lifetime is guaranteed via SRAM array. Results of full-system simulation for a quad-core CMP running PARSEC-2 benchmark suit confirm an average of 49 times improvement in cache lifetime and more than 50% reduction in cache power consumption when compared to baseline configurations.
采用自适应线路替换的混合高速缓存架构的高耐久性和高性能设计
在本文中,我们提出了一种运行时策略,用于管理对芯片多处理器中使用STT-RAM内存作为基准技术的最后一级缓存的写操作。为此,我们假设将每个缓存集分解为有限的SRAM行和大量的STT-RAM行。SRAM线是经常写入数据的目标,很少写入或只读的数据被推入STT-RAM。作为一种新颖的贡献,它利用低开销、全硬件技术来检测工作集的写密集型数据块,并将它们放入SRAM行中,而其余的数据块作为候选数据块,在系统运行期间重新映射到STT-RAM块上。因此,采用STT-RAM阵列实现的缓存架构具有大容量和近零泄漏能量消耗;同时通过SRAM阵列保证动态写能量、可接受的写延迟和长寿命。运行parsec2基准测试套件的四核CMP的全系统模拟结果证实,与基线配置相比,缓存寿命平均提高了49倍,缓存功耗降低了50%以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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