{"title":"Design of a Miller Amplifier using gm/ID based on A First-order Building Block Approximation","authors":"V. H. A. Palma, F. Sandoval-Ibarra","doi":"10.1109/ATEE58038.2023.10108237","DOIUrl":null,"url":null,"abstract":"In this paper the gm/ID methodology for designing analog CMOS circuits is used. As a case of study the single-ended Miller OTA design is widely discussed and analized. In order to show the advantage of gm/ID it is demonstrated that the first order building block approximation allows to understand not only how to correctly do the sizing of each transistor, but also the physical meaning of each small-signal design model. This design flow is carried out by using design rules of a 130 nm CMOS technology, where Cadence is used for performing simulations at transistor level, obtaining results that confirm the usefullnes of the design models and the basics’ veracity.","PeriodicalId":398894,"journal":{"name":"2023 13th International Symposium on Advanced Topics in Electrical Engineering (ATEE)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 13th International Symposium on Advanced Topics in Electrical Engineering (ATEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ATEE58038.2023.10108237","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper the gm/ID methodology for designing analog CMOS circuits is used. As a case of study the single-ended Miller OTA design is widely discussed and analized. In order to show the advantage of gm/ID it is demonstrated that the first order building block approximation allows to understand not only how to correctly do the sizing of each transistor, but also the physical meaning of each small-signal design model. This design flow is carried out by using design rules of a 130 nm CMOS technology, where Cadence is used for performing simulations at transistor level, obtaining results that confirm the usefullnes of the design models and the basics’ veracity.