Static characteristics of the graded gap and heterojunction diodes containing the cathode static domain

Abstract

The short length diode with forming cathode static domain and occurring impact ionization are considered. The diode peculiarity is the usage of heterojunction on cathode contact and region with varying composition. The analysis of the diodes operation was performed using Monte Carlo technique. The influence of doping profile on diode current - voltage characteristic is investigated. The carriers concentration and electric field distribution are obtained. The cathode static domain parameters depending on diode structure and voltage bias are determined. The main influence on domain parameters is caused by low concentration region size in the cathode. The role of impact ionization as electrons energy relaxation mechanism has been demonstrated.