Planar varistor mode Schottky diode frequency tripler covering 60 GHz to 110 GHz

M. Hrobak, M. Sterns, M. Schramm, W. Stein, L. Schmidt
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引用次数: 6

Abstract

Frequency extender modules of vector network analyzers (VNA) and signal generators, as well as front end modules of semiconductor automatic testsystems (ATS) make use of broadband resistive diode frequency multipliers. We present the design and construction of a planar varistor tripler utilizing commercial gallium arsenide (GaAs) Schottky diodes on thin-film processed alumina (Al2O3) substrate. Synthesis is based on a co-simulation procedure between 3D electromagnetic field (EM) and nonlinear circuit simulations. Measurement data over the focused output frequency range from 60 GHz to 110 GHz is presented.
平面压敏模式肖特基二极管频率三倍器覆盖60 GHz至110 GHz
矢量网络分析仪(VNA)和信号发生器的增频模块以及半导体自动测试系统(ATS)的前端模块都采用了宽带电阻二极管乘频器。我们提出了利用商业砷化镓(GaAs)肖特基二极管在薄膜加工氧化铝(Al2O3)衬底上设计和构建平面压敏电阻三倍器。综合基于三维电磁场(EM)和非线性电路仿真的联合仿真过程。给出了聚焦输出频率范围为60 GHz至110 GHz的测量数据。
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