A monolithic gallium arsenide interval timer IC with integrated PLL clock synthesis having five hundred picosecond single shot resolution

S. Nati, I. Kyles
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引用次数: 0

Abstract

A gallium arsenide (GaAs) integrated circuit for measuring single shot time intervals with 500 picosecond resolution has been designed, fabricated and tested. The circuit contains a 12 bit counter that can be extended externally and control circuitry for the detection of multiple intervals. Options such as number of intervals, minimum interval time, and timing resolution are user programmable. The circuit employs a self contained 2.0 GHz phase locked loop (PLL) clock synthesizer with less than 5 picoseconds rms jitter, and a lock time of 2.5 microseconds. The circuit is packaged in a 14 mm/sup 2/, 52 pin thermally enhanced plastic package and operates from a single +5 Volt supply. The nominal power dissipation is 2.8 Watts. The circuit is fabricated in a 0.6 micron gate length, enhancement/depletion GaAs MESFET process utilizing 4 layers of gold interconnect metalization. Inductors, capacitors and thin film resistors can be fabricated in this process, enabling integrated analog circuitry. The die size is 3.28 mm by 3.15 mm. The circuit has applications in collision avoidance sensors, laser surveying, police radar, and test.
一种集成锁相环时钟合成的单片砷化镓间隔定时器IC,具有500皮秒的单次射击分辨率
设计、制作并测试了一种分辨率为500皮秒的砷化镓(GaAs)单次射击时间间隔测量集成电路。该电路包含一个12位计数器,可以扩展到外部和控制电路,用于检测多个间隔。间隔数、最小间隔时间和定时分辨率等选项都是用户可编程的。该电路采用自包含的2.0 GHz锁相环(PLL)时钟合成器,其有效值小于5皮秒,锁定时间为2.5微秒。该电路封装在14 mm/sup 2/, 52引脚热增强塑料封装中,并从单个+5伏电源运行。标称功耗为2.8瓦。该电路采用0.6微米栅极长度,增强/耗尽GaAs MESFET工艺,利用4层金互连金属化。电感、电容器和薄膜电阻器可以在此过程中制造,从而实现集成模拟电路。模具尺寸为3.28 mm × 3.15 mm。该电路应用于防撞传感器、激光测量、警用雷达和测试等领域。
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